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Entering college on a French horn music scholarship, Robert Dennard earned his bachelor’s, master’s, and Ph.D. degrees in electrical engineering. He then joined IBM as a researcher in 1954.

At that time, storing a single bit of information in memory required six transistors — a relatively expensive and limiting technique. In 1966, Dennard delivered dramatic improvements in speed and capacity when he invented the one-transistor memory cell. This design became the basis for dynamic RAM, or DRAM, which is used in practically all computing devices to this day.

Dennard also worked on metal-oxide-semiconductor field-effect transistors (MOSFETs). In a 1974 paper he co-authored, Dennard described how transistors could become smaller (in accordance with Moore’s Law) while retaining the same energy consumption — a principle that became known as Dennard scaling.

Dennard’s innovations earned him the United States’ National Medal of Technology and Innovation in 1988 and the Kyoto Prize in Advanced Technology in 2013. Yet Dennard remained humble, saying, “I’m a very ordinary person, with a very ordinary background and upbringing… It’s not enough to just think creatively. Once you’ve posed the question, you’ve got to answer the question.”

Dennard stayed at IBM until his retirement in 2014. He died at 91 from a bacterial infection.